| PART |
Description |
Maker |
| PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp.
PEREGRINE[Peregrine Semiconductor Corp.]
|
| PE84140-EK 84140 84140-00 84140-01 84140-02 PE8414 |
Ultra-High Linearity Broadband Quad MOSFET Array
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| ALD810023 ALD810023SCL ALD810024SCL ALD810025 ALD8 |
QUAD SUPERCAPACITOR AUTO BALANCING (SAB? MOSFET ARRAY
|
Advanced Linear Devices
|
| ALD210808PCL ALD210808APCL ALD210808ASCL ALD210808 |
PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR
|
Advanced Linear Devices
|
| ALD1123ESC ALD1121E ALD1121EDA ALD1121EPA ALD1121E |
QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY 双EPAD精密配对N沟道MOSFET阵列
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| BL-BK43V4V |
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 16L SOIC, EPAD Enabled
|
Bright LED Electronics Corp.
|
| BL-BK53V4V |
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, 16L PDIP, EPAD Enabled
|
Bright LED Electronics Corp.
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| BL-BJG3V1 |
10mV Quad N-Channel Matched Pair MOSFET Array, Enhancement Mode, 14L PDIP
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| ESDAXXSCX |
QUAD TRANSIL ARRAY FOR ESD PROTECTION
QUAD TRANSIL⑩ ARRAY FOR ESD PROTECTION
|
STMICROELECTRONICS[STMicroelectronics]
|
| 551-1207-004F 551-0307-004F 551-1307-014F |
LED 3MM QUAD LOW CUR YEL PC MNT T-1 SINGLE COLOR LED ARRAY, YELLOW, 3 mm
LED 3MM QUAD HI EFF YELLOW PC M T-1 SINGLE COLOR LED ARRAY, YELLOW, 3 mm
T-1 SINGLE COLOR LED ARRAY, GREEN, 3 mm 8 PIN
|
Dialight PLC
|
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